Claiming to be the first silicon-based low noise amplifiers (LNAs) that offer a better performance-to-price ratio when compared to gallium arsenide (GaAs) chips, the BGA700L16 and the BGA734L16 are based on the company’s proprietary silicon germanium carbon process. Both feature a low-resistance ground contact. For 3G applications, the BGA734L16 integrates three amplifiers for 800, 1,900, and 2,100 MHz cellular bands and specifies a noise figure of 1.2 dB for the 2,100-MHz band. Additional features include a temperature stabilizing circuit, 1 kV of ESD protection, a 50Ω output-matching network, and gain control. The BGA700L16 targets Wireless LAN (802.11a/b/g/n) applications and integrates a single stage amplifier for the 2.45-GHz band and a two-stage amplifier for the 4.9 GHz to 5.95 GHz band. It reports a noise figure of 1.3 dB at 5.5 GHz and features matched inputs and outputs, a shutdown mode, and temperature stabilization. Prices for the BGA700L16 and the BGA734L16 start at $0.80 and $1.20 each/10,000, respectively. INFINEON TECHNOLOGIES, Milpitas, CA. (866) 951-9519.
