High-Density F-RAM Boasts 55-ns Access Time October 03, 2007
Pin-compatible with asynchronous static RAM, the FM21L16 high-density ferroelectric RAM (F-RAM) is a 2-Mbit parallel device that targets a wide array of SRAM-based industrial and consumer applications. The 3-V non-volatile RAM comes in a RoHS-compliant 44-pin TSOP-II package. It features a fast access time of 55 ns, NoDelay writes, virtually unlimited read/write cycles, and low power consumption, drawing 18 mA for read/writes and only 5 µA in sleep mode. The memory operates from 2.7V to 3.6V over the industrial temperature range of –40°C to 85°C. It uses a 128k by 16 configuration and has an industry-standard parallel interface to today's high-performance microprocessors. The interface supports a high-speed mode that enables a peak bandwidth of 80 Mbytes/s. The device has a cycle time of 110 ns and includes an advanced write-protection scheme. Unlike battery-backed SRAM, the FM21L16 is a true surface-mount solution that does not require rework steps for battery attachment and is not jeopardized by moisture, shock, and vibration. Samples of the FM21L16 are available now. Prices start at $12 each/10,000. RAMTRON INTERNATIONAL CORP., Colorado Springs, CO. (800) 545-3726.
