Samsung Reveals First 30-nm, 64-Gb NAND Flash October 24, 2007
Announced as the first 64-Gb, multi-level cell NAND flash memory chip exploiting 30-nm-class process technology, the company's flash memory device reportedly represents a major leap forward in the move to higher density flash storage. User will be able to team a maximum of 16 64-Gb flash devices to create a 128-GB memory card capable of storing 80 DVD resolution movies or 32,000 MP3 files. The device is the result of a unique manufacturing process dubbed self-aligned double patterning technology (SaDPT). In SaDPT, the first pattern transfer is a wider-spaced circuit design of the target process technology, while the second pattern transfer fills in the spaced area with a more tightly designed pattern. Production of 30-nm-class, 64-Gb flash devices is set for some time in 2009. SAMSUNG ELECTRONICS CO. LTD., San Jose, CA. (800) 726-7864.
