Debuting as two unique technologies for the manufacture of 40-nm system-on-chip (SoC) devices with embedded dynamic random access memory (eDRAM), the UX8GD eDRAM technology registers clock speeds up to 800 MHz with low operating power, while the UX8LD eDRAM technology features low leakage-current levels that reduce power consumption by as much two-thirds that of equivalent SRAM. Both technologies pair a 40-nm CMOS process with the company's eDRAM process technology and are available in configurations up to 256 Mb. Cell size is 0.06 square micron meters. The 40-nm topologies rely on high-dielectric materials such as hafnium gate dielectrics, nickel-silicide gate electrodes, and zirconium-oxide DRAM capacitors. These materials reportedly lower the concentration of impurities and parasitic resistance in the channels, resulting in lower leakage current between the drain and source, longer-term data storage, fewer variations in transistor performance, and greater performance of both logic and memory. NEC ELECTRONICS AMERICA INC., Santa Clara, CA. (800) 366-9782.
