RF Power Transistor Suits Up For Varied Markets November 14, 2007
Now in volume production, the NPTB00004 28V/5W high electron mobility transistor (HEMT) targets wireless infrastructure, broadband, and military markets. Employing the company's patented SIGANTIC NRF1 process, the device achieves 250 mW of average output power at 1% EVM in 3.5-GHz WiMAX systems. The NPTB00004 transistors come in plastic over-molded SOIC-8 packages with an exposed thermal pad. Samples and application boards are also available. Typical pricing is $9 each each/1,000 with delivery from stock to 10 weeks. NITRONEX CORP., Durham, NC. (919) 807-9100.
