Unique Architecture Revamps Power Transistor Design April 30, 2008
Claiming position as the first major advance in silicon RF power transistor design in more than 15 years, the company's design architecture reportedly delivers frequency bandwidth, voltage and power levels that exceed the capabilities of current bipolar and LDMOS technologies. The patent-pending technology promises to achieve performance levels comparable to non-silicon technologies at lower cost levels. The first three products based on the HVVFET architecture target high-power, pulsed RF applications in the L-band. All three transistors operate at voltages from 24V to 48V. Overall, the devices boast of a 30% reduction in power consumption, 100% increase in gain, and a tenfold increase in ruggedness. For pulsed applications in the L-band from 1,030 MHz to 1,090 MHz, the HVV1011-300 operates at 48V and delivers over 300W of pulsed output power while providing 15 dB of gain and 48% efficiency under pulsed-signal conditions with a pulse width of 50 µs and a pulse period of 1 ms. The device withstands a 20:1 VSWR at all phase angles under full output power. The HVV1214-025 and HVV1214-100 are enhancement mode RF transistors for L-band pulsed radar applications in the 1.2 GHz to 1.4 GHz range. Both operate off a 48V supply and produce 25W and 100W respectively. Under test conditions that generate a pulse width of 200 µs and a pulse duty cycle of 10%, the HVV1214-025 offers 17.5 dB and the HVV1214-100 offers 19.5 dB of gain typical. Both transistors can withstand an output-load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the entire band of operation. Evaluation kits and small-unit quantities are available now. Single-unit prices for the HVV1214-025, HVV1214-100, and HVV1011-300 are $135.69, $226.15, and $398.31, respectively. HVVI SEMICONDUCTORS INC., Phoenix, AZ. (866) 429-4884.
