GaN HEMT Transistors Invade WiMAX Domains June 09, 2008
Claiming a breakthrough for WiMAX applications, the 15W CGH55015F and 30W CGH55030F debut as the first GaN HEMT transistors specified to operate at frequencies up to 5.8 GHz. Reported benefits of the devices include a four-fold increase in efficiency when compared with similar power level GaAs MESFET devices, elevated frequency operation when compared with commercially available silicon LDMOS devices, and operational capabilities in the license-exempt, 5.8-GHz ISM band as well as 5.3-GHz and 5.47-GHz U-NII bands. Other features include a linearity of better than 2.5% EVM at average power under a WiMAX signal at 25% drain efficiency covering an instantaneous bandwidth of 5.5 GHz to 5.8 GHz. Both transistors are available with reference design amplifier platforms. For further details, call CREE INC., Durham, NC. (919) 313-5300.
